Semiconductor processing technology is down to the deep submicron nodes, and volume production of 28nm semiconductors has already started. Socionext is working with Taiwan Semiconductor Manufacturing Company Limited (TSMC) for manufacturing of 40nm process and further. By the synergetic effect of the world's best manufacturing capability of TSMC and the quality-control system and design-engineering ability of Socionext, we will continue to lead the LSI industry in design and manufacture of cutting-edge custom SoCs of 28nm process and beyond.
|Technology||Series||Power Supply Voltage (Typ.)|
|7nm FinFET CMOS||T.B.D||T.B.D|
|12nm FinFET CMOS||CS661 series||+ 0.7V± 0.07V / +0.8V± 0.08V|
|16nm FinFET CMOS||SC602 series||+ 0.7V± 0.07V / +0.8V± 0.08V|
|28nm Metal Gate CMOS||CS407 series||＋0.8V±0.08V / ＋0.9V±0.09V|
|28nm Metal Gate CMOS||CS405 series||＋0.9V±0.09V|
|40nm Si Gate CMOS||CS302 series||＋1.1V±0.1V|
|55nm Si Gate CMOS||CS251 series||＋1.2V±0.1V|
|65nm Si Gate CMOS||CS201 series||＋0.9 V to ＋1.3 V (supports a wide range)|
|90 nm Si Gate CMOS||CS101 series||＋0.9 V to ＋1.3 V (supports a wide range)|
The standard cells, by optimizing chip sizes, realize LSIs with higher integration and performance than is possible with macro-embedded cell arrays.
Macros whose sizes have been optimized at the transistor level can be implemented on gate arrays, enabling high-performance LSIs. A wide range of frames can be offered to the customers.
Gate / Array
Chips where the transistors (basic cells) are regularly placed are prepared. In them, only routing is provided. Thus, gate arrays shorten development time.